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Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

✍ Scribed by Barone, M.E.; Robinson, T.O.; Graves, D.B.


Book ID
117862715
Publisher
IEEE
Year
1996
Tongue
English
Weight
275 KB
Volume
24
Category
Article
ISSN
0093-3813

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Molecular dynamics simulations of the pure and doped surfaces of y-alumina have been performed. An onset of surface diffusion is observed in the pure samples near the temperature of 1200 K. The instability is caused by the cation vacancies adjacent to the surface. Silicon ions deposited into the vac