๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electrical characterization of silicon surface after reactive ion etching of silicon dioxide by CHF3

โœ Scribed by K.Y. Tong; K.W. Yip; W.M. Fung


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
187 KB
Volume
30
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Electrical characterization of SiSi0.7Ge
โœ K.Y. Lee; S.J. Koester; K. Ismail; J.O. Chu ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 291 KB

Nearly damage free etching of a high mobility Si/SiGe heterostructure is obtained by using very low power reactive ion etching and precise end-point detection. Conductance versus wire width plots of 0.08 Ixm to 1 Jam wide Si/SiGe quantum well wires show the combined nonconducting width at the edges