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Molecular beam study on scattering and sticking of molecular oxygen at Si(100)

โœ Scribed by T. Miyake; S. Soeki; H. Kato; T. Nakamura; A. Namiki; H. Kamba; T. Suzaki


Publisher
Elsevier Science
Year
1991
Weight
61 KB
Volume
242
Category
Article
ISSN
0167-2584

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Quality of molecular-beam-epitaxy-grown
โœ U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob