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Molecular-beam epitaxy of mercury-iron selenide layers and quantum wells

✍ Scribed by D. Schikora; Th. Widmer; K. Lischka; P. Schäfer; G. Machel; S. Luther; M. von Ortenberg

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
642 KB
Volume
159
Category
Article
ISSN
0022-0248

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri