Epitaxial Insulating Fluoride Layers on
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C.L. Griffiths; L.C. Jenkins; A. Hughes; R.H. Williams
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Article
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1993
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Elsevier Science
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English
β 261 KB
The epitaxial growth of the rare earth fluorides \(\mathrm{HoF}_{3}\) and \(\mathrm{GdF}_{3}\) on \(\mathrm{Ge}, \mathrm{Si}\), and GaAs has been investigated. At the same time the detailed nature of the interfaces formed has been probed by \(X\)-ray photoelectron spectroscopy. Epitaxial layers can