Epitaxial Insulating Fluoride Layers on Semiconductors

✍ Scribed by C.L. Griffiths; L.C. Jenkins; A. Hughes; R.H. Williams

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 261 KB
• Volume: 106
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1993.1274

✦ Synopsis

The epitaxial growth of the rare earth fluorides (\mathrm{HoF}{3}) and (\mathrm{GdF}{3}) on (\mathrm{Ge}, \mathrm{Si}), and GaAs has been investigated. At the same time the detailed nature of the interfaces formed has been probed by (X)-ray photoelectron spectroscopy. Epitaxial layers can readily be grown and it is shown that layers with the high temperature tysonite-like phase may be prepared in such a way as to be stable at room temperature. A critical thickness exists where the layer structure changes to a multidomain orthorhombic form; this thickness is dependent on the degree of mismatch of the lattices of overlayer and substrate. Whereas the (\mathrm{GdF}{3}-\mathrm{Ge}) interface is unreactive, strong reactions are seen for (\mathrm{HoF}{3}-\mathrm{Si}), GilF (F_{3}-\mathrm{GaAs}), and (\mathrm{LaF}_{3}-\mathrm{Si}). Reactions at the latter interface may be attenuated by an intermediate ordered layer of arsenic just one monolayer thick. O1993 Academic Press, Inc.