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Solution growth of epitaxial semiconductor-on-insulator layers

✍ Scribed by I. Silier; A. Gutjahr; N. Nagel; P.O. Hansson; E. Czech; M. Konuma; E. Bauser; F. Banhart; R. Köhler; H. Raidt; B. Jenichen

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
402 KB
Volume
166
Category
Article
ISSN
0022-0248

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✍ C.L. Griffiths; L.C. Jenkins; A. Hughes; R.H. Williams 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 261 KB

The epitaxial growth of the rare earth fluorides \(\mathrm{HoF}_{3}\) and \(\mathrm{GdF}_{3}\) on \(\mathrm{Ge}, \mathrm{Si}\), and GaAs has been investigated. At the same time the detailed nature of the interfaces formed has been probed by \(X\)-ray photoelectron spectroscopy. Epitaxial layers can