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Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

✍ Scribed by Luong, T.K.P.; Ghrib, A.; Dau, M.T.; Zrir, M.A.; Stoffel, M.; Le Thanh, V.; Daineche, R.; Le, T.G.; Heresanu, V.; Abbes, O.; Petit, M.; El Kurdi, M.; Boucaud, P.; Rinnert, H.; Murota, J.

Book ID: 125431389
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 805 KB
Volume: 557
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.11.027

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