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Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

โœ Scribed by Yang, X.; Jurkovic, M. J.; Heroux, J. B.; Wang, W. I.

Book ID
121327636
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
343 KB
Volume
75
Category
Article
ISSN
0003-6951

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## Abstract The operation in the 1020 nm wavelength range of strainedโ€layer InGaAs/GaAs separateโ€confinementโ€heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร… thick InGaAs quantum well with an indium content of 25%, which is close to cri