𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio

✍ Scribed by S.F Yoon; P.H Zhang; H.Q Zheng; K Radhakrishnan


Book ID
114194625
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
158 KB
Volume
59
Category
Article
ISSN
0254-0584

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Photoluminescence and X-ray diffraction
✍ S.F. Yoon; P.H. Zhang; H.Q. Zheng 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 516 KB

We have investigated the effect of substrate temperature (Ts varied from 410 to 560°C) on the crystalline and optical properties of In l\_x\_rGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), low t

Growth of In0.52Al0.48As on InP substrat
✍ S.F. Yoon 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 126 KB

Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st