Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio
✍ Scribed by S.F Yoon; P.H Zhang; H.Q Zheng; K Radhakrishnan
- Book ID
- 114194625
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 158 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0254-0584
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We have investigated the effect of substrate temperature (Ts varied from 410 to 560°C) on the crystalline and optical properties of In l\_x\_rGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), low t
Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st