✦ LIBER ✦

Molecular beam epitaxial GaAs/Al0.2Ga0.8As heterojunction bipolar transistor on (311)A GaAs substrate

✍ Scribed by Li, W.Q.; Bhattacharya, P.

Book ID: 114534805
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 133 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.158753

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

IIA-2 double heterojunction Al0.5Ga0.5As

IIA-2 double heterojunction Al0.5Ga0.5As/GaAs bipolar transistors with improved interfaces

✍ Fishcer, R.; Su, S.L.; Arnold, D.; Klem, J.; Morkoc, H.; Lyons, W.G.; Tejayadi, 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 111 KB

(In,Ga)As islands formed on shallow patt

(In,Ga)As islands formed on shallow patterned GaAs (1 0 0) substrates by molecular beam epitaxy

✍ Q Gong; R Nötzel; H.-P Schönherr; K.H Ploog 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 253 KB

20.2% efficiency Al0.4Ga0.6As/GaAs tande

20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy

✍ Amano, Chikara; Sugiura, Hideo; Yamamoto, Akio; Yamaguchi, Masafumi 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 525 KB

High uniformity of Al0.3Ga0.7As/ln0.15Ga

High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

✍ Yi-Jen Chan; Ming-Ta Yang; Tzu-Jin Yeh; Jen-Inn Chyi 📂 Article 📅 1994 🏛 Springer US 🌐 English ⚖ 431 KB

Optical properties of GaAs/Al0.3Ga0.7As

Optical properties of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs (100) patterned substrates

✍ S. Shimomura; K. Inoue; M. Tanaka; N. Tomita; A. Adachi; M. Fujii; T. Yamamoto; 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 366 KB

Growth dynamics of GaAs, AlAs and (Al, G

Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy

✍ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0