𝔖 Bobbio Scriptorium
✦   LIBER   ✦

20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy

✍ Scribed by Amano, Chikara; Sugiura, Hideo; Yamamoto, Akio; Yamaguchi, Masafumi

Book ID
118058119
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
525 KB
Volume
51
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Deep hole traps in Be-doped Al0.2Ga0.8As
Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy
✍ J. Szatkowski; K. SieraΕ„ski; A. Hajdusianek; E. PΕ‚aczek-Popko πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 195 KB

Deep hole traps in Be doped p-type Al 0.2 Ga 0.8 As grown by molecular beam epitaxy have been studied by the deeplevel transient-spectroscopy method applied to samples with a Schottky diode configuration. Six hole traps, labeled as H1-H6, were found. Activation energies and capture cross sections ha