(In,Ga)As islands formed on shallow patterned GaAs (1 0 0) substrates by molecular beam epitaxy
✍ Scribed by Q Gong; R Nötzel; H.-P Schönherr; K.H Ploog
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 253 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The intermetallic superconductor magnesium diboride (MgB 2 ) is a promising candidate for use in superconducting electronic devices because its high transition temperature (T c ). These applications require the development of a high-quality film fabrication process. We report the first ever attempt
ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between ZnTe and ZnMgTe was not negligible, the critical layer
We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Â 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was