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Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

✍ Scribed by D. Xu; J. Osaka; Y. Umeda; T. Suemitsu; Y. Yamane; Y. Ishii

Book ID: 126642227
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 88 KB
Volume: 20
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.748904

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