Modified Stranski-Krastanov Growth in St
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Martinez-Guerrero, E. ;Beneyton, R. ;Adelmann, C. ;Daudin, B. ;Si Dang, Le ;Mula
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Article
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2001
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John Wiley and Sons
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English
⚖ 173 KB
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In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the