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Modified Stranski–Krastanov growth in stacked layers of self-assembled islands

✍ Scribed by Schmidt, O. G.; Kienzle, O.; Hao, Y.; Eberl, K.; Ernst, F.


Book ID
120071761
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
507 KB
Volume
74
Category
Article
ISSN
0003-6951

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Modified Stranski-Krastanov Growth in St
✍ Martinez-Guerrero, E. ;Beneyton, R. ;Adelmann, C. ;Daudin, B. ;Si Dang, Le ;Mula 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 173 KB 👁 2 views

In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the