✦ LIBER ✦

Modelling of heterojunction bipolar devices

✍ Scribed by F. Mehrad; P.K. Ajmera

Book ID: 104157648
Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 430 KB
Volume: 19
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(88)80049-1

No coin nor oath required. For personal study only.

✦ Synopsis

Steady-state current voltage characteristics of heterojunction bipolar transistors fabricated from materials having position dependent properties are obtained. A finite difference method through a quasi-linearisation technique is employed to solve numericallythe three second-order non-linear differential equations describing the behaviour of these semiconductor devices. An automatic step selection process was developed in this work to ensure convergence during computation. This was found to work well but took up a fair amount of computer CPU time. An alternative, simple step selection process was then developed which considerably reduced the requirements on the computation time.

📜 SIMILAR VOLUMES

Role of carrier depletion effects and ma

Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP–Si/p-GaAs–C heterojunction bipolar transistor (HBT) devices

✍ Satbir S Madra 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 833 KB

Modelling of high-injection effects in b

Modelling of high-injection effects in bipolar devices

✍ Niccolò Rinaldi 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 700 KB

Self heating modeling of SiGe heterojunc

Self heating modeling of SiGe heterojunction bipolar transistor

✍ Pierre Yvan Sulima; Jean-Luc Battaglia; Thomas Zimmer; J.-C. Batsale 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 736 KB

A model of heat transfer in a SiGe heterojunction bipolar transistor (HBT) at the macro scale is established, that leads to an analytical solution. Modelling is based on the use of integral transforms as the Fourier and Laplace ones. The heat source is assumed as a heat flux applied at the base-coll

The GaAs heterojunction bipolar transist

The GaAs heterojunction bipolar transistor: an electron device with optical device reliability

✍ T.S. Henderson 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 569 KB

Modelling of heterojunction bipolar tran

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

✍ R. Schultheis; N. Bovolon; J.-E. Müller; P. Zwicknagl 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 341 KB

This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is

A model for abrupt double heterojunction

A model for abrupt double heterojunction bipolar transistors

✍ Antonio J. García-Loureiro; Juan M. López-González 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 178 KB

## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction