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Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions

✍ Scribed by P.V. Rybin; D.V. Kulikov; Yu.V. Trushin; R.A. Yankov; G. Ecke; W. Fukarek; W. Skorupa; J. Pezoldt

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Theoretical description of high-temperat

✍ D. V. Kulikov; Yu. V. Trushin; R. A. Yankov; J. Pezoldt; W. Skorupa 📂 Article 📅 1998 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 80 KB

Ion implantation of iodine into silicon

✍ A. Audren; A. Benyagoub; L. Thome; F. Garrido 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 302 KB

The damage recovery and electrical activ

✍ K. Kyllesbech Larsen; V. Privitera; S. Coffa; F. Priolo; C. Spinella; M. Saggio; 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 534 KB

Influence of channeling effects on ion d

✍ Carnera, A. ;Gasparotto, A. ;Berti, M. ;Fabbri, R. 📂 Article 📅 1994 🏛 Springer-Verlag ⚖ 370 KB

Theoretical and experimental investigati

✍ P.V. Rybin; D.V. Kulikov; Yu.V. Trushin; R.A. Yankov; M. Voelskow; F. Scharmann; 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 220 KB

Structure and characteristics of the hig

✍ Kalinina, E V; Ivanov, A M; Strokan, N B; Lebedev, A A 📂 Article 📅 2011 🏛 Institute of Physics 🌐 English ⚖ 707 KB