Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields

✍ Scribed by P.V. Rybin; D.V. Kulikov; Yu.V. Trushin; R.A. Yankov; M. Voelskow; F. Scharmann; J. Pezoldt

• Book ID: 114164411
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 220 KB
• Volume: 178
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(00)00476-6