A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the h
โฆ LIBER โฆ
Modelling DC characteristics of HEMTs
โ Scribed by Abuelma'atti, M.T.
- Book ID
- 121288243
- Publisher
- The Institution of Electrical Engineers
- Year
- 1985
- Tongue
- English
- Weight
- 208 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0013-5194
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A simple empirical equation is presented to relate the collector current to the collector-emitter voltage and base current of the heterostructure bipolar junction transistor (HBJT). This equation cover the entire Ic/VcE characteristics, The parameters of this model can easily be extracted from separ