## Abstract Modeling and simulation of seminconductor devices requires solution of highly nonlinear equations, such as the Boltzmann transport, hydrodynamic, and driftโdiffusion equations. The conventional finiteโelement method (FEM) and finite difference (FD) schemes always result in oscillatory r
Modelling comminution devices using DEM
โ Scribed by Paul Cleary
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 901 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0363-9061
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
In order to accomplish two-dimensional device simulation with a large number of nodes, in this paper we propose the device-partition method (DPM) to resolve the problem that the memory size of the simulation environment is insufficient. The idea of DPM is that the device can be divided into several
## Abstract This article presents a novel design methodology for wireless frequency multipliers using negativeโimage device models applicable to nonlinear devices. Negativeโimage device models of nonlinear devices are generated by incorporating optimization techniques into a hypothetical negativeโi
A novel design methodology for wireless power amplifiers is presented using negative-image device models that are applicable to GaAs FETs and other power devices. Negative-image device models of a power device are generated by incorporating hypothetical negativeimage matching networks and a load-lin
## Abstract The aim of this note is to point out that the boundary condition for the network modelling of thermal problems may have been incorrectly used in some previous studies. It is shown that the accuracy of the network analogue or the equivalent finiteโdifference method is on the par with the
The suitability of the transmission line modelling method for studying field-particle interaction devices is assessed through an example of a simple two-cavity klystron amplifier. Two separate numerical studies are presented, covering both beam bunching in the buncher cavity and field generation in