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Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

✍ Scribed by N. Zerounian; M. Enciso-Aguilar; T. Hackbarth; H.-J. Herzog; F. Aniel

Book ID: 108271559
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 516 KB
Volume: 51
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2007.01.027

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