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Modeling of Vibrating-Body Field-Effect Transistors Based on the Electromechanical Interactions Between the Gate and the Channel

✍ Scribed by Ueki, S.; Nishimori, Y.; Imamoto, H.; Kubota, T.; Kakushima, K.; Ikehara, T.; Sugiyama, M.; Samukawa, S.; Hashiguchi, G.

No coin nor oath required. For personal study only.

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