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Modeling of the interstitial diffusion of boron in crystalline silicon

โœ Scribed by O. I. Velichko, V. V. Aksenov, A. P. Kovaleva


Book ID
118802231
Publisher
Springer US
Year
2012
Tongue
English
Weight
179 KB
Volume
85
Category
Article
ISSN
1573-871X

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Diffusion of interstitial Hydrogen molec
โœ Vasilii Gusakov ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 148 KB

A theoretical modeling of the diffusivity of interstitial hydrogen molecules in germanium and silicon crystals has been carried out using quantumchemical method. It was established that the diffusion process of an interstitial hydrogen molecule is a thermally activated process over potential barrier