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Ab initio modeling study of boron diffusion in silicon

✍ Scribed by W Windl; R Stumpf; X.-Y Liu; M.P Masquelier


Book ID
117626618
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
284 KB
Volume
21
Category
Article
ISSN
0927-0256

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We present ab-initio modeling results including formation, migration, and activation energies for B and O diffusion through bulk and grain boundaries in polycrystalline HfO 2 films. Modeling results clearly indicate that B and O can penetrate through a 40 A HfO 2 film via grain boundary diffusion, b