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Modeling of facet growth on patterned Si substrate in gas source MBE

โœ Scribed by Shaozhong Li; Qi Xiang; Dawen Wang; Kang L. Wang


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
267 KB
Volume
157
Category
Article
ISSN
0022-0248

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Gas-source MBE growth of freestanding Si
โœ J.L. Liu; S.J. Cai; G.L. Jin; Y.S. Tang; K.L. Wang ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 124 KB

Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), ( 111), (110), and ( 113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.