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Modeling electromigration and the void nucleation in thin-film interconnects of integrated circuits

✍ Scribed by R.V. Goldstein; M.E. Sarychev; D.B. Shirabaikin; A.S. Vladimirov; Yu.V. Zhitnikov


Book ID
110296711
Publisher
Springer Netherlands
Year
2001
Tongue
English
Weight
515 KB
Volume
109
Category
Article
ISSN
1573-2673

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Spectroscopic ellipsometry study of thin
✍ Rudra, S. ;WΓ€chtler, T. ;Friedrich, M. ;Louis, S. J. ;Himcinschi, C. ;Zimmermann πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 439 KB

## Abstract The objective of this work is to study the optical and electrical properties of tantalum nitride and tantalum barrier thin films used against copper diffusion in Si in integrated circuits using spectroscopic ellipsometry in the VUV and UV–visible range. Single layers of tantalum nitride