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MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer

โœ Scribed by Boo, Jin-Hyo; Rohr, Carsten; Ho, Wilson


Book ID
108342729
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
167 KB
Volume
189-190
Category
Article
ISSN
0022-0248

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MOCVD Growth and Characterization of GaN
โœ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 169 KB ๐Ÿ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1ยฑ ยฑx N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality