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MOCVD grown InP/InGaAs structures for optical receivers

โœ Scribed by E.J. Thrush; C.G. Cureton; A.T.R. Briggs


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
950 KB
Volume
93
Category
Article
ISSN
0022-0248

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0.1-ฮผm InAlAs/InGaAs HEMTS with an InP-r
โœ Takatomo Enoki; Hiroshi Ito; Kenji Ikuta; Yohtaro Umeda; Yasunobu Ishii ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 719 KB

High-performance ZnAlAs / ZnGaAs HEMTs with a highly uniform threshold voltage are fabricated using an ZnP-recess-etch stopper. Recess-deplh control is improued, and design vf the device chuructehtics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps / gate is achieved