✦ LIBER ✦

0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

✍ Scribed by Takatomo Enoki; Hiroshi Ito; Kenji Ikuta; Yohtaro Umeda; Yasunobu Ishii

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 719 KB
Volume: 11
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(19960220)11:3<135::aid-mop7>3.0.co;2-m

No coin nor oath required. For personal study only.

✦ Synopsis

High-performance ZnAlAs / ZnGaAs HEMTs with a highly uniform threshold voltage are fabricated using an ZnP-recess-etch stopper. Recess-deplh control is improued, and design vf the device chuructehtics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps / gate is achieved with these HEMTs.