## Abstract The design and fabrication of a highβefficiency inverse classβF power amplifier using a 10βW gallium nitride (GaN) highβelectron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for highβefficiency operation. The measurement
MMIC class-F power amplifiers using field-plated GaN HEMTs
β Scribed by Gao, S.; Sanabria, C.; Xu, H.; Long, S.I.; Heikman, S.; Mishra, U.; York, R.A.
- Book ID
- 114455459
- Publisher
- The Institution of Electrical Engineers
- Year
- 2006
- Tongue
- English
- Weight
- 895 KB
- Volume
- 153
- Category
- Article
- ISSN
- 1350-2417
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## This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology was applied to a 0.75-m gate length and 300-m gate width AlGaN/ GaN HEMT. The 1 dB compression point o
## Abstract A design methodology of harmonic output impedance optimization is proposed to achieve high efficient power amplifier. First of all, the effects of harmonic impedances of high frequency and high power device on drain voltage and current are analyzed. The optimum harmonic impedance region