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Mixed partial dislocation core structure in GaN by high resolution electron microscopy

✍ Scribed by Kioseoglou, J. ;Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Karakostas, Th.

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
328 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The core structures of a 1/6 [2$\bar 2$03] mixed partial dislocation in wurtzite GaN have been investigated using a combination of high resolution transmission electron microscopy, circuit mapping, and image simulation of relaxed models. HRTEM simulated images of relaxed atomic models, derived by energetic calculations with a modified Stillinger–Weber‐type empirical interatomic potential, were calculated and compared to the experimental images. Among twenty‐four stable core configurations the 12‐ and 10‐atom rings satisfied the experimental contrast. A pattern registration procedure was used for the matching of simulated and experimental HRTEM images. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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