✦ LIBER ✦

Mitsubishi new GaAs FETs & MMICs

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 132 KB
Volume: 3
Category: Article
ISSN: 0959-3527
DOI: 10.1016/0959-3527(90)90188-y

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Mitsubishi, PCN GaAs MMIC power amp

📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 150 KB

Ga0.51In0.49P/InxGa1−xAs/GaAs doped-chan

Ga0.51In0.49P/InxGa1−xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)

✍ Yo-Sheng Lin; Chih-Chen Chen; Shey-Shi Lu 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 282 KB

A new procedure for nonlinear statistica

A new procedure for nonlinear statistical model extraction of GaAs FET-integrated circuits

✍ Francesco Centurelli; Alberto Di Martino; Giuseppe Scotti; Pasquale Tommasino; A 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 320 KB

A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been

An analysis of higher-order of a GaAs FE

An analysis of higher-order of a GaAs FET depending on IMD source impedance and its application to a design of low-distortion MMIC power amplifiers

✍ Shigeo Kusunoki; Takeshi Furuta; Yoshikazu Murakami 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 281 KB

Chip yield for FETs fabricated on low-su

Chip yield for FETs fabricated on low-surface-defect GaAs wafers grown by a new MBE system

✍ S. Kato; J. Shigeta; T. Miyata; M. Kawata; N. Tamura; K. Takahashi 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 332 KB