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A wideband 8-12 GHz inline RF MEMS power sensor that is based on sensing a certain percentage of the incident microwave power coupled by a MEMS membrane is presented, and the sensor is accomplished with GaAs MMIC technology. In order to improve microwave characteristics and the frequency response of
## Abstract A fully matched Kaβband wideband pseudomorphic highβelectronβmobility transistor (PHEMT) 1βW monolithic millimeterβwave integrated circuit (MMIC) highβpower amplifier (HPA) without any external circuit is developed. The twoβstage HPAs are prepared on 2βmil GaAs substrates with a small c
This paper first presents the detection and non-detection function of an inline RF MEMS power sensor by employing two shunt capacitive MEMS switch structures. It solves a problem that regardless of whether the power sensor needed to detect the power, a certain microwave power will always be detected