Ka-band 1-W PHEMT MMIC power amplifiers on 2mil-thick GaAs substrates
✍ Scribed by C. W. Huang; S. J. Chang; W. Wu; C. L. Wu; C. S. Chang
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 172 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A fully matched Ka‐band wideband pseudomorphic high‐electron‐mobility transistor (PHEMT) 1‐W monolithic millimeter‐wave integrated circuit (MMIC) high‐power amplifier (HPA) without any external circuit is developed. The two‐stage HPAs are prepared on 2‐mil GaAs substrates with a small chip size of 3.46 × 2.9 mm. At least 10‐dB small‐signal gain, 29.5 dBm P~−1dB~, 31‐dBm P~sat~, and better than 12‐dB output return loss. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 181–185, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20764