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Misorientation-angle dependence of boron incorporation into (0 0 1)-oriented chemical-vapor-deposited (CVD) diamond

✍ Scribed by Masahiko Ogura; Hiromitsu Kato; Toshiharu Makino; Hideyo Okushi; Satoshi Yamasaki


Book ID
104022311
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
297 KB
Volume
317
Category
Article
ISSN
0022-0248

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Optical, crystallographic, and transport properties of nominally undoped n-type and Zn doped ptype Ga x Inl \_ x As/lnP (0.44 < x < 0.49) grown by liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), and metal organic chemical vapor deposition (MOCVD) have been studied and related to the different