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Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

✍ Scribed by Kumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.

Book ID: 120085917
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 76 KB
Volume: 86
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1861116

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