Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN

✍ Scribed by O.A. Soltanovich; E.B. Yakimov; N.M. Shmidt; A.S. Usikov; W.V. Lundin

• Book ID: 108237316
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 254 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.039