Studies on temperature and concentration dependent minority carrier lifetime in heavily doped InGaAsP
โ Scribed by S.S. De; A.K. Ghosh; A.K. Hajra; J.C. Halder; M. Bera
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 183 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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๐ SIMILAR VOLUMES
The fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In 0.53 Ga 0.47 As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs
Photoluminescence (PL) and electroluminescence (EL) spectra in the n-GaPjredox electrolyte system were measured at different excitation levels. The EL spectra showed a considerable blue shift with increasing the concentration of the hole injecting redox system [SO;', G?+, Fe(CN)z-1. A similar effect