Spectral dependence of photo- and electroluminescence on minority carrier concentration in the n-GaP/electrolyte system
β Scribed by B. Smandek; H. Gerischer
- Publisher
- Elsevier Science
- Year
- 1985
- Tongue
- English
- Weight
- 626 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0013-4686
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β¦ Synopsis
Photoluminescence (PL) and electroluminescence (EL) spectra in the n-GaPjredox electrolyte system were measured at different excitation levels. The EL spectra showed a considerable blue shift with increasing the concentration of the hole injecting redox system [SO;', G?+, Fe(CN)z-1. A similar effect was observed with increasing the input intensities of the exciting laser light in PL experiments. We interpret these shifts in a saturation model involving intra band gap states. Conclusion to the spatial origin of EL and PL are drawn, with EL being emitted in the diffusion length of holes underneath the surface (ISOD-5OOOA). Recombination at the surface is completely radiationless, but quenching of luminescence due to increase of non-radiative surface recombination velocity gives information on a change of chemical composition of the n-Gap surface.
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