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Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

โœ Scribed by G Lucovsky; J.C Phillips


Book ID
117148926
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
108 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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