๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes

โœ Scribed by Chitnis, A. ;Adivarahan, V. ;Zhang, J. P. ;Shatalov, M. ;Wu, S. ;Yang, J. ;Simin, G. ;Asif Khan, M. ;Hu, X. ;Fareed, Q. ;Gaska, R. ;Shur, M. S.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
107 KB
Volume
200
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


(In)AlGaN deep ultraviolet light emittin
โœ Kolbe, Tim ;Sembdner, Toni ;Knauer, Arne ;Kueller, Viola ;Rodriguez, Hernan ;Ein ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 318 KB

## Abstract The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends

Dislocation reduction in high Al-content
โœ Ahmad, Iftikhar ;Krishnan, Balakrishnan ;Zhang, Bin ;Fareed, Qhalid ;Lachab, Moh ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 267 KB

## Abstract We report a new approach for growing thicker (>2โ€‰ยตm) lowโ€defect AlGaN layers over sapphire using pulsed MOCVD procedure. These high content AlGaN layers serve as templates for subsequent nโ€AlGaN growth for deep ultraviolet light emitting diodes (DUV LEDs). During the growth of the Al~__

Thermal and nonthermal factors affecting
โœ Guo, H. ;Yang, Y. ;Cao, X. A. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 349 KB

## Abstract The optical characteristics of AlGaNโ€based multipleโ€quantumโ€well (MQW) lightโ€emitting diodes (LEDs) with peak wavelengths ranging from 265โ€“340 nm were characterized over a wide current range. It was found that thermal effects due to selfโ€heating can be largely eliminated by pulsing the

High-output-power AlGaN/GaN ultraviolet-
โœ Nagata, Kengo ;Ichikawa, Tomoki ;Takeda, Kenichiro ;Nagamatsu, Kentaro ;Iwaya, M ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 253 KB

## Abstract We demonstrated activation annealing of Mgโ€doped pโ€type Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3โ€‰ร—โ€‰10^16^โ€‰cm^โˆ’3^ at room temperature was achieved by a

Properties of Quantum Well Excitons in G
โœ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 195 KB ๐Ÿ‘ 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well