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(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

✍ Scribed by Kolbe, Tim ;Sembdner, Toni ;Knauer, Arne ;Kueller, Viola ;Rodriguez, Hernan ;Einfeldt, Sven ;Vogt, Patrick ;Weyers, Markus ;Kneissl, Michael

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
318 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends clearly on the QW thickness. The highest output power has been found for the LEDs with a QW thickness of 2.2 nm. This effect is attributed to the trade‐off between electron and hole wave function overlap and carrier concentration in the active region which are triggered by the quantum confined Stark effect.

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