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346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode

โœ Scribed by Nishida, T. ;Kobayashi, N.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
140 KB
Volume
176
Category
Article
ISSN
0031-8965

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Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well