Midinfrared photoluminescence from SnTe/PbTe/CdTe double quantum wells grown by molecular beam epitaxy
โ Scribed by Kazuto Koike; Ryou Kawaguchi; Mitsuaki Yano
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 486 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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โฆ Synopsis
Molecular beam epitaxial growth and photoluminescence (PL) properties of SnTe/PbTe/CdTe double quantum wells (DQWs) on (1 0 0)-oriented GaAs substrates are reported. These DQWs were consisted of a very thin SnTe/PbTe QW nested in a 10-nm-thick PbTe/CdTe QW. Efficient midinfrared PL was observed from the DQWs at 300 K in agreement with the coherent SnTe/PbTe growth on the thick CdTe barrier layer. The PL peak wavelength of the DQWs was found to increase with the SnTe thickness d by covering a wide range of the 3-5 mm atmospheric window with dr 2.5 monolayer.
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