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Midinfrared photoluminescence from SnTe/PbTe/CdTe double quantum wells grown by molecular beam epitaxy

โœ Scribed by Kazuto Koike; Ryou Kawaguchi; Mitsuaki Yano


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
486 KB
Volume
42
Category
Article
ISSN
1386-9477

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โœฆ Synopsis


Molecular beam epitaxial growth and photoluminescence (PL) properties of SnTe/PbTe/CdTe double quantum wells (DQWs) on (1 0 0)-oriented GaAs substrates are reported. These DQWs were consisted of a very thin SnTe/PbTe QW nested in a 10-nm-thick PbTe/CdTe QW. Efficient midinfrared PL was observed from the DQWs at 300 K in agreement with the coherent SnTe/PbTe growth on the thick CdTe barrier layer. The PL peak wavelength of the DQWs was found to increase with the SnTe thickness d by covering a wide range of the 3-5 mm atmospheric window with dr 2.5 monolayer.


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