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Microwave noise performance and modeling of SiGe-based HFETs

✍ Scribed by Aguilar, M.E.; Crozat, P.; Hackbarth, T.; Herzog, H.-J.; Aniel, F.

Book ID: 114617994
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 450 KB
Volume: 52
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2005.857170

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## Abstract The noise modeling of microwave FETs based on the noise‐wave representation of a transistor‐intrinsic circuit is considered. Frequency‐dependent noise‐wave temperatures are introduced as empirical model parameters and modeled using neural networks. In this way, online optimization in a