Gallium (4 wt%) doped ZnO (GZO) thin films were deposited on hydrothermally grown ZnO buffered and non-buffered MgAl 2 O 4 (1 1 1) substrates by RF magnetron sputtering technique at a growth temperature of 250 1C. The epitaxial ZnO buffer layer was deposited on the MgAl 2 O 4 (1 1 1) substrate by a
✦ LIBER ✦
Microwave-assisted hydrothermally grown epitaxial ZnO films on 〈1 1 1〉 MgAl2O4 substrate
✍ Scribed by Laura-Lynn Liew; Hong Quang Le; Gregory K.L. Goh
- Book ID
- 113758501
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 812 KB
- Volume
- 189
- Category
- Article
- ISSN
- 0022-4596
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