✦ LIBER ✦

Microwave annealing for ultra-shallow junction formation

✍ Scribed by P. Kohli; S. Ganguly; T. Kirichenko; H. -J. Li; S. Banerjee; E. Graetz; M. Shevelev

Book ID: 107452857
Publisher: Springer US
Year: 2002
Tongue: English
Weight: 335 KB
Volume: 31
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-002-0209-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Vacancy engineering for ultra-shallow ju

Vacancy engineering for ultra-shallow junction formation

✍ R. Gwilliam; N.E.B. Cowern; B. Colombeau; B. Sealy; A.J. Smith 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Merits and demerits of light absorbers f

Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing

✍ Akira Matsuno; Eisuke Takii; Takanori Eto; Ken-ichi Kurobe; Kentaro Shibahara 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 222 KB

Formation of germanium shallow junction

Formation of germanium shallow junction by flash annealing

✍ A. Satta; A. D’Amore; E. Simoen; W. Anwand; W. Skorupa; T. Clarysse; B. Van Dael 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 265 KB

Ultra-shallow junction by laser annealin

Ultra-shallow junction by laser annealing: Integration issues and modelling

✍ Antonino La Magna; Paola Alippi; Ioannis Deretzis; Vittorio Privitera; Guglielmo 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 822 KB

Gas immersion laser doping (GILD) for ul

Gas immersion laser doping (GILD) for ultra-shallow junction formation

✍ G. Kerrien; T. Sarnet; D. Débarre; J. Boulmer; M. Hernandez; C. Laviron; M.-N. S 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 536 KB

Laser annealing of plasma implanted boro

Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon

✍ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured