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Microtwinning and growth defects in GaAs MBE layers

✍ Scribed by M. Bafleur; A. Munoz-Yague; A. Rocher


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
771 KB
Volume
59
Category
Article
ISSN
0022-0248

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Oval Defects in the MBE Grown AlGaAs/InG
✍ K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 93 KB

Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium