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Microstructure of high temperature annealed SIMOX wafer

โœ Scribed by Hiroshi Miyatake; Yasuo Yamaguchi; Yoji Mashiko; Tadashi Nishimura; Hiroshi Koyama

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
513 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES

Formation of CoSi2 in SIMOX wafers by hi
Formation of CoSi2 in SIMOX wafers by high dose cobalt implantation
โœ T.P. Sjoreen; R. Jebasinski; K. Schmidt; S. Mantl; H. Holzbrecher; W. Speier ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 498 KB

SIMOX (separation by implanted oxygen) wafers were implanted with high doses of cobalt and annealed at high temperatures in order to study the formation of buried single-crystal CoSi 2 layers in this material. For this study SIMOX wafers of (100) oriented silicon were implanted at 100-200 keV with d