✦ LIBER ✦

Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111)

✍ Scribed by Feng Wu; Shai Zamir; Boris Meyler; Joseph Salzman; Yuval Golan

Book ID: 107452832
Publisher: Springer US
Year: 2002
Tongue: English
Weight: 905 KB
Volume: 31
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-002-0178-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nanoscale lateral epitaxial overgrowth o

Nanoscale lateral epitaxial overgrowth of GaN on Si (111)

✍ Zang, K. Y.; Wang, Y. D.; Chua, S. J.; Wang, L. S. 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 598 KB

Reduction of cracks in GaN films grown o

Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

✍ S. Zamir; B. Meyler; J. Salzman 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 146 KB

Growth behavior of GaN epilayers on Si(1

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

✍ Yeom, Bo-Ra; Navamathavan, R.; Park, Ji-Hyeon; Ra, Yong-Ho; Lee, Cheul-Ro 📂 Article 📅 2012 🏛 Royal Society of Chemistry 🌐 English ⚖ 726 KB

Epitaxial Growth of Crack-Free GaN on Pa

Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate

✍ Lee, Seung-Jae; Bak, Gyu Hyeong; Jeon, Seong-Ran; Lee, Sang Hern; Kim, Sang-Mook 📂 Article 📅 2008 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 481 KB

Selective Area Growth of GaN on Stripe-P

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy

✍ Kawaguchi, Y. ;Honda, Y. ;Yamaguchi, Y. ;Sawaki, N. ;Hiramatsu, K. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

Epitaxy of GaN on Si(111) substrate by t

Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method

✍ Wang, Juan; Ryu, Heui-Bum; Park, Mi-Seon; Lee, Won-Jae; Choi, Young-Jun; Lee, Ha 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 927 KB